Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH01130574
Kind Code:
A
Abstract:
PURPOSE:To make characteristics of FET elements uniform in a device wherein a plurality of FET elements are formed on the same substrate, by making the arrangement directions of drains and sources of all the FET elements constant. CONSTITUTION:In the respective FET elements 2, 3, the respective drain diffusion layers 41, 42, and the respective source diffusion layers 51, 52 are formed, and drain electrodes D1, D2 and source electrodes S1, S2 are formed. In this manner, the same layers 41, 42, and layers 51, 52 in a pair of FET's 2, 3 are arranged in the same direction. As a result, at the time of ion implantation, the inner forms of layers 41, 42 and of layers 51, 52 becomes almost identical independently of implantation direction. Even if alignment shift of gate electrodes G1, G2 occurs, characteristics of the elements 2, 3 become identical. Therefore characteristics of all elements are made uniform.
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Inventors:
ICHIHARA ATSUSHI
KIKUCHI KENICHI
KIKUCHI KENICHI
Application Number:
JP28985087A
Publication Date:
May 23, 1989
Filing Date:
November 17, 1987
Export Citation:
Assignee:
ROHM CO LTD
International Classes:
H01L21/265; H01L21/822; H01L27/04; H01L27/095; H01L29/80; (IPC1-7): H01L21/265; H01L27/04; H01L29/80
Domestic Patent References:
| JPS60152038A | 1985-08-10 | |||
| JPS62256466A | 1987-11-09 | |||
| JPS62115861A | 1987-05-27 |
Attorney, Agent or Firm:
Kazuhide Okada
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