Title:
MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH04241424
Kind Code:
A
Abstract:
PURPOSE: To form the profile of a source-drain area improved in short-channel effect in the vicinity of the drain area of an n-type MOS transistor having an LDD structure.
CONSTITUTION: An LDD N--diffused layer is formed by implanting ions into a source-drain area a plurality of times by changing the injecting energy and injecting amount of the ions at the time of forming the source-drain area.
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Inventors:
BABA TOMOYA
Application Number:
JP312891A
Publication Date:
August 28, 1992
Filing Date:
January 16, 1991
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/265; H01L21/336; H01L29/78; (IPC1-7): H01L21/265; H01L21/336; H01L29/784
Attorney, Agent or Firm:
Nishida Arata