PURPOSE: To form homogeneous polycrystalline silicon at a high speed by bringing a metallic cover whose inner wall has a specular surface into close contact with a substrate to form a reverberatory furnace and by supplying an electric current to an inverted U-shaped silicon carrier through electrodes so as to maintain the surface of the carrier at a specified temp. or above.
CONSTITUTION: The bottom peripheral edge of a cover having the closed top and the open bottom is brought into close contact with a substrate to form a reaction furnace. A bent rodlike silicon carrier is uprighted on the substrate in the furnace, and while heating the carrier by supplying an electric current, a gaseous mixture of chlorosilane with hydrogen is introduced to deposit polycrystalline silicon on the carrier. The cover is made of metal and has the specular inside. The rodlike silicon carrier 2 is provided with an inverted U shape having a gently curved part 17, and the surface of the carrier 2 is maintained at ≥1,100°C. Because of the specular inside of the reaction furnace, the radiation of heat through the cover is inhibited to reduce the internal temp. gradient, so cracking is not caused and heat loss is reduced. Since the inverted U-shaped carrier 2 has no angular part, crystals are uniformly deposited and grown, so fusing is not caused.
YAMADA YOUJI
KIRII SEIICHI
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