Title:
MASK FOR ELECTRON BEAM EXPOSURE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2002217094
Kind Code:
A
Abstract:
To provide a mask for electron beam exposure having a highly accurate ultrafine pattern.
The mask for electron beam exposure comprises an electron shield film having a mask part 10 where a specified pattern to be transferred is formed, a film for supporting the electron shield film having through holes corresponding to the specified pattern, and a frame for supporting the supporting film on the outside of the mask part 10 wherein the electron shield film comprises a tantalum film 4 and the supporting film comprises a diamond film 3.
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Inventors:
KURIHARA KENJI
YOSHIHARA HIDEO
SHIMAZU NOBUO
YOSHIHARA HIDEO
SHIMAZU NOBUO
Application Number:
JP2001014338A
Publication Date:
August 02, 2002
Filing Date:
January 23, 2001
Export Citation:
Assignee:
NTT ADVANCED TECH KK
RIIPURU KK
RIIPURU KK
International Classes:
G03F1/20; G03F1/40; G03F1/68; G03F1/80; H01L21/027; (IPC1-7): H01L21/027; G03F1/16
Attorney, Agent or Firm:
Masaki Yamakawa