To provide a method for forming a carbon thin film, by which a hydrogen-free, dense and hard diamond-like carbon film can be easily formed.
In the method for forming the carbon film, a carbon film forming apparatus for depositing the carbon film on a surface of a sample substrate arranged on a sample substrate electrode by means of a magnetron sputtering method is used, and voltages are applied on a carbon target substrate electrode and the sample electrode in the following 1 to 4 conditions, respectively. 1. A voltage applied on the target substrate electrode is a negative pulse voltage, and a pulse voltage-time ratio is 40% or less. 2. A pulse time of the pulse voltage applied on the target substrate electrode is 20 to 200 μs. 3. A voltage applied on the sample substrate electrode is a negative pulse voltage, and a pulse voltage-time ratio is 50% or less. 4. The magnitude of the negative pulse voltage applied on the sample substrate electrode is from -20 to -200 V.
IKEYAMA MASAMI
YUKIMURA KEN
OGISO HISATO
NAKANO ZEN
Next Patent: NOBLE METAL COLLOID PARTICLE AND METHOD FOR MANUFACTURING THE SAME