METHOD OF MANUFACTURING OXIDE SUPERCONDUCTIVE STRUCTURE

Title:

METHOD OF MANUFACTURING OXIDE SUPERCONDUCTIVE STRUCTURE

Document Type and Number:

Japanese Patent JP2002104900

Kind Code:

A

Abstract:

To provide an oxide superconductive structure formed by 123 forming type oxide superconductive structure on a substrate by the liquid phase epitaxial method (LPE method) through a seed crystal film which is easy to control (wide control tolerance), when forming crystal film.

On the substrate 14, there is formed an oxide layer (seed film) 12 which is structured with Ln-A-M-O (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu, A represents Ba or Sr, M represents Fe, Ni or Mo), and the oxide superconductive film 16 having a crystal structure of Ln1.Ba2.Cu3.O7-a type (Ln represents Y, La, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Yb or Lu) is formed using a liquid growing method.

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Inventors:

YAMADA YASUSHI
MIURA TADAMASA
SUGA TOSHIHIRO
ARAKI TAKESHI
MAEDA TOSHIHIKO
UNOKI HIROMI
HIRABAYASHI IZUMI

Application Number:

JP2000294251A

Publication Date:

April 10, 2002

Filing Date:

September 27, 2000

Export Citation:

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Assignee:

CHUBU ELECTRIC POWER
INT SUPERCONDUCTIVITY TECH
TOSHIBA CORP
FURUKAWA ELECTRIC CO LTD

International Classes:

C30B29/22; H01B12/06; H01B13/00; H01L39/24; (IPC1-7): C30B29/22; H01B12/06; H01B13/00; H01L39/24

Attorney, Agent or Firm:

Akio Iida (1 person outside)

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