Title:
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2020065083
Kind Code:
A
Abstract:
To provide a transistor that has high and stable electric characteristics even when having a fine structure, and to achieve high performance and high reliability even in a semiconductor device including the transistor.SOLUTION: A conductor, an oxide semiconductor and an insulator are provided on a substrate. The oxide semiconductor has a first region and a second region. The second region has a resistance lower than that of the first region. The whole surface of the oxide semiconductor that is the first region is surrounded by the conductor via the insulator.SELECTED DRAWING: Figure 1
Inventors:
YAMAZAKI SHUNPEI
ENDO YUTA
TSUKAMOTO YOKO
ENDO YUTA
TSUKAMOTO YOKO
Application Number:
JP2020006730A
Publication Date:
April 23, 2020
Filing Date:
January 20, 2020
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L21/336; H01L21/28; H01L21/8234; H01L21/8242; H01L27/06; H01L27/088; H01L27/108; H01L27/1156; H01L27/146; H01L29/41; H01L29/423; H01L29/49; H01L29/786; H01L29/788; H01L29/792
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