Title:
炭化珪素単結晶インゴットの製造方法
Document Type and Number:
Japanese Patent JP7030506
Kind Code:
B2
Abstract:
The present invention provides a method including: a temperature raising step of raising a temperature in a crystal growing furnace with a silicon carbide raw material and a silicon carbide seed crystal arranged therein to a crystal growing temperature; a single crystal growing step of maintaining the crystal growing temperature and causing a silicon carbide single crystal to grow on the silicon carbide seed crystal; and a temperature lowering step of lowering the temperature in the crystal growing furnace from the crystal growing temperature to stop growth of the silicon carbide single crystal, in which the method further comprises, between the single crystal growing step and the temperature lowering step, a temperature lowering preparation step of maintaining the temperature in the crystal growing furnace at the crystal growing temperature and causing concentration of nitrogen gas in the crystal growing furnace to increase to be higher than concentration of nitrogen gas in the temperature raising step and in the single crystal growing step, and in which the concentration of the nitrogens gas in the crystal growing furnace in the temperature lowering step is higher than the concentration of the nitrogen gas in the temperature raising step and the single crystal growing step.
Inventors:
Yohei Fujikawa
Application Number:
JP2017246605A
Publication Date:
March 07, 2022
Filing Date:
December 22, 2017
Export Citation:
Assignee:
SHOWA DENKO K.K.
International Classes:
C30B23/02; C30B29/36
Domestic Patent References:
| JP2013087005A |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomomasa Katsumata
Norihiko Ara
Tomomasa Katsumata