PURPOSE: To form a pattern of diamond film simply, by forming a negative pattern film on a substrate, growing a diamond film, and removing both the negative pattern film and the diamond film on the negative pattern film.
CONSTITUTION: A negative pattern film 12 comprising a mask material is formed on a substrate 11. A diamond film 13 is grown on the surface of the negative pattern film 12 and the surface of the substrate 11. When the negative pattern film 12 is removed, the diamond film 13 thereon is also removed, and the intended pattern of the diamond film 13 is formed. The substrate 11 comprises metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. The mask material comprises transition metals of groups IVa, Va and VIa in the periodic table, an Si substrate, carbide and the like. Thus the pattern of the diamond film 13 is simply formed.
IMAI TAKAHIRO
FUJIMORI NAOHARU
JPH08166017A | 1996-06-25 |
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