METHOD FOR POLISHING SEMICONDUCTOR WAFER

Title:

METHOD FOR POLISHING SEMICONDUCTOR WAFER

Document Type and Number:

Japanese Patent JP2001198799

Kind Code:

A

Abstract:

To provide a method for polishing semiconductor wafers capable of producing semiconductor wafers having good surface roughness and reducing polishing time with high productivity.

In a method for polishing the surface of a semiconductor wafer W by pressing the semiconductor wafer W against an abrasive cloth 6 adhered to a rotary surface plate 5 and supplied with abrasives S with silica scattered, a method for polishing semiconductor wafers performing the polishing at temperatures of 30-33°C using abrasives adjusted to colloidal silica of 1.0-1.5 wt.% in concentration and pH of 11.0-11.5.

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Inventors:

TAKAHASHI YOSHIKI

Application Number:

JP2000004724A

Publication Date:

July 24, 2001

Filing Date:

January 13, 2000

Export Citation:

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Assignee:

TOSHIBA CERAMICS CO

International Classes:

B24B37/00; B24B37/015; H01L21/304; (IPC1-7): B24B37/00; H01L21/304

Attorney, Agent or Firm:

Hisano Hatano (1 person outside)

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