Title:
MONOLITHIC INTEGRATED CIRCUIT FOR MILLIMETER WAVE AND MANUFACTURE OF SAID INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JPH06204409
Kind Code:
A
Abstract:
PURPOSE: To enable a millimeter wave monolithic integrated circuit to be simplified in a manufacturing process and minimized in parasitic loss and a diode and a transistor to be separately optimized in characteristics as required by a method wherein HFETs and Schottky diodes are combined and joined together through an integrating constitution method. CONSTITUTION: Semiconductor layers are grown on a substrate 1, wherein the semiconductor layers are composed of the layers S for Schottky diodes and the other layers 14 grown flat on the layers S for HFETs, and the layers H are possessed of a thin buffer layer 5. Furthermore, a prescribed layer A is interposed between the buffer layer 5 of HFETs and the layers S of the Schottky diodes, and the prescribed layer A functions as an etching stop layer, a detachment stop layer, and a barrier for charged carriers of the HFET. The Schottky diodes and the HFHTs are constituted in a semi-planar type.
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Inventors:
HANSU BURUTSUGAA
Application Number:
JP14338793A
Publication Date:
July 22, 1994
Filing Date:
June 15, 1993
Export Citation:
Assignee:
DAIMLER BENZ AG
International Classes:
H01L21/331; H01L21/82; H01L21/8232; H01L21/8252; H01L27/06; H01L27/095; H01L29/73; (IPC1-7): H01L27/06; H01L21/331; H01L29/73
Attorney, Agent or Firm:
Toshio Yano (2 outside)