Title:
【発明の名称】半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP3374813
Kind Code:
B2
Inventors:
Fumihiko Sato
Application Number:
JP34426599A
Publication Date:
February 10, 2003
Filing Date:
December 03, 1999
Export Citation:
Assignee:
NEC
International Classes:
H01L29/73; H01L21/331; H01L21/8222; H01L27/06; H01L29/165; H01L29/737; (IPC1-7): H01L21/331; H01L21/8222; H01L27/06; H01L29/737
Domestic Patent References:
| JP3292740A | ||||
| JP4196436A | ||||
| JP9260397A |
Other References:
Ｊ．Ｃ．Ｓｔｕｒｍ，ｅｔ．ａｌ．，”Ｇｒａｄｅｄ−Ｂａｓｅ Ｓｉ／Ｓｉ１−ｘＧｅｘ／Ｓｉ Ｈｅｔｅｒｏｊｕｎｃｔｉｏｎ Ｂｉｐｏｌａｒ Ｔｒａｎｓｉｓｔｏｒｓ Ｇｒｏｗｎ ｂｙ Ｒａｐｉｄ Ｔｈｅｒｍａｌ Ｃｈｅｍｉｃａｌ Ｖａｐｏｒ，Ｄｅｐｏｓｉｔｉｏｎ ｗｉｔｈ Ｎｅａｒ−Ｉｄｅａｌ Ｅｌｅｃｔｒｉｃａｌ Ｃｈａｒａｃｔｅｒｉｓｔｉｃｓ”，ＩＥＥＥ ＥＬＥＣＴＲＯＮ ＤＥＶＩＣＥ ＬＥＴＴＥＲＳ，１９９１年 ６月，ＶＯＬ．１２，ＮＯ．６，ｐｐ．３０３−３０５
Attorney, Agent or Firm:
Mitsuru Kimura