PURPOSE: To suppress the change of a resistance value of a ferromagnetic thin film of a sensor part in a magnetoresistance effect-type magnetic head even when a substrate is bonded with the use of an adhesive such as glass or resin including impurities.
CONSTITUTION: A sensor part 1 of a magnetoresistance effect thin film and an electrode part 2 for wiring are attached to a substrate 3 by an SiO2 protecting film 6. Moreover, a protecting film 8 including one or more kinds of aluminum oxide, silicon nitride and aluminum nitride is formed on the surface, and a substrate 4 is bonded by an adhesive layer 5 of glass or resin, etc. When the protecting film 8 is formed, a diffusion coefficient of impurities becomes small, thereby eliminating influences of the impurities included in the adhesive layer 5.
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