PURPOSE: To prevent thermal decomposition of organic substance at a time of vapor deposition and to form an organic thin film having high orientation and high crystallizability by projecting atomic beams in the case of applying a sputtering vapor deposition method and forming the organic thin film on a solid base plate.
CONSTITUTION: After vapor-depositing Al on a base plate 1 for vapor deposition in a preliminary chamber 6 provided in a vacuum tank, oxygen is introduced and alumina is formed by glow discharge. After carrying the base plate 1 to a sputtering chamber 5 and introducing gaseous argon, argon atomic beams are subjected to impulse toward a sputtering target 4 from a generator 2 of the atomic beams for sputtering vapor deposition. When the argon atomic beams are subjected to impulse toward the base plate being subjected to sputtering vapor deposition while performing sputtering vapor deposition, N-sali cylideneaniline-3-carboxylic acid is vapor-deposited on the base plate. After a sputtering chamber 7 is regulated to vacuum, the sample is returned to the preliminary chamber 6 and then a lead electrode is vapor-deposited.
HORIUCHI TSUTOMU
TABEI HISAO
SUKEGAWA TAKESHI
