PURPOSE: To shut a path of a current taking a forward parasitic diode of a transistor(TR) connecting to a power supply line and a ground line at the operation stop of an output operation of the circuit and to increase an output high level at the normal output operation as high as possible and to reduce its output low level as low as possible with respect to the output circuit.
CONSTITUTION: The output circuit in which field effect TRs T1, T2 are connected in series between a 1st power supply line VCC and a 2nd power supply line GND and a connecting point of the TRs T1, T2 is connected to an output section out is provided with a field effect TR T3 controlling a back gate BG1 of the TR T1 or a back gate BG2 of the TR T2. The output circuit is provided with a field effect TR T4 assisting the back gate control of the Tr T3 and a signal inverting element IN to apply an input signal to the TR T4.
JP2021044315 | NONVOLATILE SEMICONDUCTOR STORAGE DEVICE |
JPH02194646 | CMOS SEMICONDUCTOR DEVICE |
ASAMI FUMITAKA
KYUSHU FUJITSU ELECTRONIC