Title:
PATTERN FORMING METHOD
Document Type and Number:
Japanese Patent JPH01118127
Kind Code:
A
Abstract:
PURPOSE:To prevent the charging up of a lower layer resist, and to enable the processing of a resist pattern at a low temp. by using a material contg. a halogen atom selected from the group comprising fluorine, bromine and iodine atoms in a molecule for a lower layer resist in a multi-layer resist process applying an electron beam lithography. CONSTITUTION:In the method for forming a resist pattern according to the multi-layer resist process applying the electron beam lithography, the material which contains at least one kind of halogen selected from the group comprising the fluorine, the bromine and the iodine atoms in the molecule is used for the lower layer resist. The useful halogen contg. material is exemplified by, for example, an acrylic polymer or a styrene polymer, etc. which is substd. for the halogen atom. Said halogen contg. material is applied on the substrate by a technique such as a spin coating method, followed by baking the obtd. layer to form the lower layer resist. Thus, the charging up of the lower layer resist is prevented, and the processing of the resist pattern at the low temp. is permitted.
Inventors:
OSHIO SHUZO
KOBAYASHI KOICHI
KOBAYASHI KOICHI
Application Number:
JP27467087A
Publication Date:
May 10, 1989
Filing Date:
October 31, 1987
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
G03F7/11; G03F7/09; H01L21/027; (IPC1-7): G03C1/00; G03F7/00; H01L21/30
Attorney, Agent or Firm:
Aoki Akira (3 outside)
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