To provide a photomask and a method for manufacturing the photomask, which can reduce variance in dimensional errors of a mask pattern width, and to provide a method for manufacturing a semiconductor device using the photomask.
The photomask 1 includes a pattern forming region 3, an annular region 4 having a prescribed width surrounding the pattern forming region, and a non-transfer pattern forming region 5 outside the annular region 4, on a glass substrate 2. In the pattern forming region 3, a mask pattern 7 to be transferred onto a semiconductor substrate 41 is formed by selectively depositing a light-shielding material. In the annular region 4, a light-shielding zone 8 is formed in the entire region by depositing a light-shielding material (solid deposition). In the non-transfer pattern forming region 5, a non-transfer pattern 12 not to be transferred onto the semiconductor substrate 41 is formed by selectively depositing a light-shielding material.
Mio Kawasaki
Yuichi Minagawa