PURPOSE: To prevent deterioration of a pattern form due to stationary wave effect or the like by changing the film thickness of the photoresist during exposure.

CONSTITUTION: A compound represented by general formula 1 R being an n- butyl group is added to another proper resist material in an amount of several tens wt.% to produce the photoresist material changing in the film thickness during the exposure. The change of the film thickness is set to the change of reversing of the maximum and minimum of the accumulated energy incurring the stationary wave effect, thus permitting uniform exposure to be executed even in the case of patterning of photolithography on a highly-reflective substrate having different steps, and the obtained resist pattern to cause no deterioration of the form.