Title:
PLASMA CVD DEVICE
Document Type and Number:
Japanese Patent JP3310875
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma CVD device, wherein powder generation is reduced, and a high quality thin film is formed on a substrate by assigning a conductive block in the gap among multiple gas supply tubes and making the height of the gas supply tube and that of the conductive block equal, for suppressing an nonuniform plasma generation between a ladder electrode and a film forming unit back plate.
SOLUTION: The plasma chemical vapor-deposition type(CVD) device comprises a reaction vessel 1, multiple gas supply tubes 6 assigned in plane for introducing a reaction gas in the reaction vessel, an exhaust means for exhausting the reaction gas in the reaction vessel 1, a ladder-type flat discharge electrode 2 comprising multiple wire rods housed in the reaction vessel 1, and a power source 3 which supplies the discharge electrode 2 with glow discharge electric power. An amorphous thin film is formed on a substrate surface assigned, facing the discharge electrode 2, in the reaction vessel 1. Here, metal blocks 11 are assigned at the gaps among multiple gas supply tubes 6, with the height of the gas supply tube 6 and the metal block 11 being equal.
Inventors:
Yoshiaki Takeuchi
Masayoshi Murata
Masayoshi Murata
Application Number:
JP20034296A
Publication Date:
August 05, 2002
Filing Date:
July 30, 1996
Export Citation:
Assignee:
MITSUBISHI HEAVY INDUSTRIES,LTD.
International Classes:
H05H1/46; C23C16/44; C23C16/455; C23C16/50; H01L21/205; H01L21/31; (IPC1-7): H01L21/205; C23C16/44; C23C16/50; H01L21/31; H05H1/46
Domestic Patent References:
| JP7330488A | ||||
| JP744540A | ||||
| JP6260434A | ||||
| JP6151334A | ||||
| JP574713A |
Attorney, Agent or Firm:
Takehiko Suzue (3 outside)