Title:
プラズマ処理装置および基板処理方法
Document Type and Number:
Japanese Patent JP5440604
Kind Code:
B2
Abstract:
A substrate processing method for performing a plasma process on a processing target substrate by a plasma processing apparatus is provided. The plasma processing apparatus comprises: a processing chamber; a gas supply unit; a mounting table; a microwave generator; a dielectric plate; a slot antenna plate; a wavelength shortening plate; and a microwave supply unit, and the microwave supply unit comprises a coaxial waveguide and a distance varying device. The substrate processing method comprises: mounting the processing target substrate on the mounting table; generating microwave by the microwave generator; and varying, by the distance varying device, a distance in a radial direction between a part of an outer surface of an inner conductor and a facing member facing a part of an outer surface of the inner conductor in order to uniformly generate plasma under a lower surface of the dielectric plate in the processing chamber.
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Inventors:
Kiyotaka Ishibashi
Osamu Morita
Osamu Morita
Application Number:
JP2011527670A
Publication Date:
March 12, 2014
Filing Date:
August 16, 2010
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H05H1/46; C23C16/511; H01L21/205; H01L21/3065; H01L21/31
Domestic Patent References:
| JP2002124196A | 2002-04-26 | |||
| JP2004265611A | 2004-09-24 | |||
| JP2008182713A | 2008-08-07 | |||
| JP2003234327A | 2003-08-22 | |||
| JP2001176857A | 2001-06-29 | |||
| JP2006179477A | 2006-07-06 |
Attorney, Agent or Firm:
Patent Business Corporation Imy International Patent Office
Hidehiko Ito
Morishita Hachiro
Hiroyuki Yoshida
Hidehiko Ito
Morishita Hachiro
Hiroyuki Yoshida