Title:
POLISHING LIQUID FOR CMP AND MANUFACTURING METHOD THEREOF, AND POLISHING METHOD
Document Type and Number:
Japanese Patent JP2017107918
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a polishing liquid for CMP (Chemical Mechanical Polishing), by which the rate of etching a cobalt-containing part can be kept down while retaining a good polishing speed on the cobalt-containing part.SOLUTION: A polishing liquid for CMP is arranged for polishing a surface of a substrate to be polished, provided that the substrate has an insulative material part 21, a cobalt-containing part 22a, and a titanium-containing part 22b gluing the insulative material part with the cobalt-containing part, and the cobalt-containing part is exposed from the surface to be polished. The polishing liquid comprises: a methacrylic acid-based polymer having a structural unit originating the reaction of a monomer component including at least methacrylic acid under a condition in which no inorganic acid is present; abrasion particles; a metal corrosion inhibitor; and water.SELECTED DRAWING: Figure 2
Inventors:
SAKASHITA MASAHIRO
OTSUKA YUYA
FUKAZAWA MASATO
OTSUKA YUYA
FUKAZAWA MASATO
Application Number:
JP2015238795A
Publication Date:
June 15, 2017
Filing Date:
December 07, 2015
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
H01L21/304; B24B37/00; C09K3/14
Foreign References:
| WO2015108113A1 | 2015-07-23 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshinori Shimizu
Hiroyuki Hirano
Tomoya Furoshita
Yoshinori Shimizu
Hiroyuki Hirano
Tomoya Furoshita