To provide a polishing device, a polishing method and a semiconductor device manufacturing method, for improving polishing precision by applying polishing pressure distribution on a semiconductor wafer through the combined use of a compression fluid pressure when unevenness of the surface of an integrated circuit element consisting of an insulation film, formed on a semiconductor wafer surface, is flattened by polishing.
When unevenness of an insulation film and a metal film of the surface of the semiconductor wafer is polished and flattened in a state that the semiconductor wafer 5 is pressed against a polishing pad 6 by a pad 3 for pressurization consisting of a rigid plate 2, situated at a head body 1 for pressurization, and a stretchable film, the arbitrary pressure of compressed fluid for through holes 8 formed in the rigid plate 2 is applied on the back of the outer peripheral part of the semiconductor wafer through a pad 3 for pressurization. A mechanical pressure from the rigid plate is applied on the central part of the semiconductor wafer and polishing pressure distribution is regulated in a wafer surface. Thus, since the insulation film, formed on the surface of the semiconductor wafer surface, and the metal film can be uniformly polished for flattening, tolerance of the depth of focus of photolithography can be increased and since machining precision of dry etching is improved, a fine pattern can be formed with high precision and density of a semiconductor integrated circuit can be increased.
NEZU HIROKI
IKEGAMI EIJI
SATO KIYOHIKO
Next Patent: POLISHING PAD AND ITS MANUFACTURING METHOD