Title:
POLISHING PAD
Document Type and Number:
Japanese Patent JP2001244223
Kind Code:
A
Abstract:
To provide a polishing pad where fluctuation in polishing speed and accuracy is small even if the thickness of the polishing pad is reduced by dressing.
This polishing pad is used for polishing a surface, particularly, for flattening a semiconductor wafer or forming wiring, and consists of a macromolecular porous body. In this case, the polishing surface has at least one independent bubble per cm2 with an average hole diameter of 0.3 mm or more, and at least 100 independent bubbles per cm2 with an average hole diameter of 0.1 mm or less.
Inventors:
ICHIMURA SHIGEKI
MUTO KUNITERU
OSE RYOJI
MUTO KUNITERU
OSE RYOJI
Application Number:
JP2000053489A
Publication Date:
September 07, 2001
Filing Date:
February 29, 2000
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
B24B37/20; B24B37/24; C08J5/14; C08J9/32; H01L21/304; (IPC1-7): H01L21/304; B24B37/00; C08J5/14; C08J9/32
Attorney, Agent or Firm:
Kunihiko Wakabayashi