Title:
パワー半導体モジュール
Document Type and Number:
Japanese Patent JP6905356
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a power semiconductor module incorporating multiple semiconductor elements, and capable of operating even if short circuit fault occurs in some of the semiconductor elements.SOLUTION: A power semiconductor module includes a semiconductor element, and a circuit breaking element connected in series therewith. The circuit breaking element has an insulator, and a metal layer provided thereon, where the metal layer includes a first portion and a second portion connected with external wiring, respectively, and a blowout portion. The first and second portions are provided while spaced apart from each other, and the blowout portion is connected, at both ends thereof, with the first and second portions. In the flow path of a current flowing through the semiconductor element and the circuit breaking element, the profile perpendicular to the current flow direction is smaller in the blowout portion than in the first and second portions.SELECTED DRAWING: Figure 3
Inventors:
Hiroaki Ito
Daisuke Hiratsuka
Nobumitsu Tata
Kazuhiro Ueda
Toshiharu Obe
Daisuke Hiratsuka
Nobumitsu Tata
Kazuhiro Ueda
Toshiharu Obe
Application Number:
JP2017044794A
Publication Date:
July 21, 2021
Filing Date:
March 09, 2017
Export Citation:
Assignee:
Toshiba Corporation
Toshiba Infrastructure Systems & Solutions Corporation
Toshiba Infrastructure Systems & Solutions Corporation
International Classes:
H01L25/07; H01L25/18; H02M7/48
Domestic Patent References:
| JP2014093881A | ||||
| JP10243660A | ||||
| JP8195411A | ||||
| JP6291448A | ||||
| JP2011258763A | ||||
| JP10210758A | ||||
| JP2002186261A |
Foreign References:
| US20140126087 | ||||
| US5859772 | ||||
| CN101394137A |
Attorney, Agent or Firm:
Masahiko Hinataji