To provide a resin material for forming the insulation layer of a semiconductor device, having superior adhesiveness with other resin materials and with a metal foil or an alloy foil, and a high breaking elongation and stress relaxing properties, to provide a varnish solution and a B stage material for forming the resin material, a laminate provided with the resin material, and to provide a wiring board and a semiconductor device.
The resin material has a 50% of the breaking elongation amount or over and a 1 GPa or lower of the Young's modulus at a temperature range of 10 to 30 °C. The resin material contains a reactive elastomer (A) capable of reacting with an epoxy resin, an epoxy resin (B), and a curing agent (C) for the epoxy resin. Further, the curing agent (C) for the epoxy resin contains a resin (D), the distance of function groups of which is larger than that of phenol novolak resin. Then value (A×100)/(A+B+C) is selected to be 60 mass% or higher and 100 mass% of lower.
KYOGOKU YOSHITAKA
ISHIBASHI MASAHIRO
ICHI MASATOSHI
