Title:
SEMICONDCUTOR STORAGE DEVICE AND ITS MANUFACTURE
Document Type and Number:
Japanese Patent JP3447328
Kind Code:
B2
Abstract:
PURPOSE: To reduce a cell/area by forming a contact hole only at a desired position and forming a local silicide wiring by a metal having a high melting point after covering a gate electrode with a silicon oxide film.
CONSTITUTION: A field oxide film 2 is formed in a field region of a semiconductor substrate and elemental isolation from an active region is performed. After forming a gate oxide film 3 and a gate electrode 4, the gate electrode 4 is covered with an oxide silicon film 5 in the construction. A contact hole 7 is partially formed on a polysilicon 4 on the field oxide film 2. Silicide wiring is patterned in such a manner that it overlaps with the gate electrode 4 to a certain extent, and the contact hole 7 with an upper metal wire is formed over the wiring. By doing this, the degree of freedom in layout can be increased such as a reduction in an allowance between active region and contact.
Inventors:
Kiyotaka Yonekawa
Application Number:
JP16459493A
Publication Date:
September 16, 2003
Filing Date:
July 02, 1993
Export Citation:
Assignee:
Oki Electric Industry Co., Ltd.
International Classes:
H01L21/28; H01L21/768; H01L21/8244; H01L23/522; H01L27/11; (IPC1-7): H01L21/8244; H01L21/28; H01L21/768; H01L27/11
Domestic Patent References:
| JP62119961A | ||||
| JP4218956A | ||||
| JP5198774A | ||||
| JP613576A |
Other References:
【文献】欧州特許出願公開517408(EP,A1)
【文献】欧州特許出願公開469215(EP,A1)
【文献】欧州特許出願公開469215(EP,A1)
Attorney, Agent or Firm:
Mamoru Shimizu (1 person outside)