Title:
SEMICONDUCTOR CRYSTAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JPS61137314
Kind Code:
A
Abstract:
PURPOSE:To realize growth of high quality crystal, by providing an optical window to the molecular beam epitaxial (MBE) growth chamber and urging reaction through irradiation of light during the growth. CONSTITUTION:An optical window 11 is attached through a cylindrical boat 12, the window material 13 of quartz is heated 15 and it is kept at a constant temperature by a temperature controller 17. A shroud 18 of liquid N2 is provided at the internal side of boat 12. The excima laser beam 22 passes through the window material 13 owing to the galvanomirror 23, irradiating a substrate 5. A cell 3 is filled with raw material, it is then heated, and MBE growth is carried out on the substrate 5 heated and fixed to an Mo ingot 6. In this case, reaction between substrate and molecular beam molecules and decomposition of molecular beam molecules are accelerated and high quality crystal can be obtained. The liquid N2 shroud 18 effectively absorbs high pressure vapor element and prevents its arrival at the window 13 and also prevents its revaporized amount from the window 13 and contaminating gas molecules released from arriving at the substrate by seizing them. Therefore, quality of crystal obtained is very high.
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Inventors:
HAYAKAWA TOSHIRO
SUYAMA NAOHIRO
TAKAHASHI KOUSEI
YAMAMOTO SABURO
SUYAMA NAOHIRO
TAKAHASHI KOUSEI
YAMAMOTO SABURO
Application Number:
JP25957084A
Publication Date:
June 25, 1986
Filing Date:
December 07, 1984
Export Citation:
Assignee:
SHARP KK
International Classes:
H01L21/203; C30B23/06; H01L21/26; (IPC1-7): H01L21/26
Domestic Patent References:
| JPS55122871A | 1980-09-20 | |||
| JPS58119630A | 1983-07-16 |
Attorney, Agent or Firm:
Aoyama Aoi