Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2006286722
Kind Code:
A
Abstract:
To reduce the ambient temperature dependency of drain current in a semiconductor device wherein MOS transistor is used as a constant-current circuit.
The semiconductor device comprises an element region 12 formed in a substrate 11, an element isolation region 17 so formed as to surround the element region in the substrate 11, and the MOS transistor formed in the element region 12. The area of the element region 12 is so set that a change of current in the MOS transistor with respect to the ambient temperature may be small.
Inventors:
YABE TOMOAKI
Application Number:
JP2005101447A
Publication Date:
October 19, 2006
Filing Date:
March 31, 2005
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/822; H01L21/8234; H01L27/04; H01L27/088; H01L29/78
Attorney, Agent or Firm:
Takehiko Suzue
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Takashi Mine
Yoshihiro Fukuhara
Sadao Muramatsu
Ryo Hashimoto
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