Title:
半導体装置
Document Type and Number:
Japanese Patent JP5324829
Kind Code:
B2
Abstract:
A semiconductor device includes a substrate, a transistor formed over the substrate, insulating layers formed over the substrate, a multilayer wiring formed in the insulating layers, a first inductor formed in the insulating layers, and a second inductor formed over the first inductor and overlapping the first inductor. The insulating layers contain a silicon, wherein at least the two insulating layers are formed between the first inductor and the second inductor, and the first inductor and the second inductor are a spiral wiring pattern.
More Like This:
| JP2014203841 | SEMICONDUCTOR DEVICE |
| JP2024027795 | semiconductor equipment |
Inventors:
Yasutaka Nakashiba
Application Number:
JP2008148164A
Publication Date:
October 23, 2013
Filing Date:
June 05, 2008
Export Citation:
Assignee:
Renesas Electronics Corporation
International Classes:
H01L21/822; H01F17/00; H01L21/3205; H01L21/768; H01L23/522; H01L27/04
Domestic Patent References:
| JP2008502215A | ||||
| JP2003133431A |
Attorney, Agent or Firm:
Shinji Hayami
Previous Patent: JPS5324828
Next Patent: METHOD FOR TRACKING BODY OUTLINE IN IMAGE AND OUTLINE EXTRACTING DEVICE
Next Patent: METHOD FOR TRACKING BODY OUTLINE IN IMAGE AND OUTLINE EXTRACTING DEVICE