Title:
Semiconductor device
Document Type and Number:
Japanese Patent JP5912394
Kind Code:
B2
Abstract:
A transistor which includes an oxide semiconductor and can operate at high speed is provided. A highly reliable semiconductor device including the transistor is provided. An oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer formed in a groove of a base insulating layer. The channel formation region is embedded in a position overlapping with a gate electrode which has a side surface provided with a sidewall. The groove includes a deep region and a shallow region. The sidewall overlaps with the shallow region, and a connection portion between a wiring and the electrode layer overlaps with the deep region.
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Inventors:
Shunpei Yamazaki
Application Number:
JP2011225524A
Publication Date:
April 27, 2016
Filing Date:
October 13, 2011
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L29/786; H01L21/28; H01L21/336; H01L21/768; H01L21/8242; H01L21/8244; H01L21/8247; H01L23/522; H01L27/10; H01L27/108; H01L27/11; H01L27/115; H01L29/417; H01L29/788; H01L29/792
Domestic Patent References:
| JP2007299850A | ||||
| JP2011119718A | ||||
| JP2008535205A | ||||
| JP2011151384A |
Foreign References:
| WO2010028269A2 |
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