Title:
半導体装置
Document Type and Number:
Japanese Patent JP7085975
Kind Code:
B2
Abstract:
A semiconductor device includes: a second semiconductor layer in a surface layer of a first semiconductor layer; a third semiconductor layer in a surface layer of the second semiconductor layer; a first trench penetrating the second semiconductor layer and the third semiconductor layer to reach an inside of the first semiconductor layer; a second trench penetrating, from an upper surface of the first semiconductor layer, the third semiconductor layer to reach an inside of the second semiconductor layer; and a fourth semiconductor layer in contact with a bottom of the second trench.
Inventors:
Tatsuo Harada
Application Number:
JP2018235379A
Publication Date:
June 17, 2022
Filing Date:
December 17, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
H01L29/78; H01L29/739
Domestic Patent References:
| JP2015065420A | ||||
| JP2018110166A | ||||
| JP2013084899A | ||||
| JP2018186233A | ||||
| JP11345969A | ||||
| JP2003318396A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita