Title:
SEMICONDUCTOR IC CONTACT STRUCTURE
Document Type and Number:
Japanese Patent JP2002131375
Kind Code:
A
Abstract:
To provide a semiconductor IC contact structure suitable for testing a high frequency characteristic because its signal path is shorter than that of a conventional one, manufacturable at a low cost, and sufficiently applicable for a fine-pitch arrangement solder ball.
In this structure electrically connecting the solder ball 2 serving as a connection electrode of the semiconductor IC 1 to a land pattern 4 formed on a inspection circuit base board 3, contacts 5 each formed of a ring-shaped coil spring are arranged in correspondence to the respective solder balls 2, and the solder balls 2 are forcibly pressed to the contacts 5.
Inventors:
MIZUTA MASAHARU
Application Number:
JP2000322179A
Publication Date:
May 09, 2002
Filing Date:
October 23, 2000
Export Citation:
Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
G01R1/06; G01R1/073; H01R33/76; G01R31/26; (IPC1-7): G01R31/26; G01R1/06; G01R1/073; H01R33/76
Attorney, Agent or Firm:
Keigo Murakami (3 outside)
Previous Patent: BURN-IN TEST PROGRAM SIMULATION DEVICE, ITS METHOD, AND STORAGE MEDIUM
Next Patent: SEMICONDUCTOR IC CONTACT STRUCTURE
Next Patent: SEMICONDUCTOR IC CONTACT STRUCTURE