Title:
SEMICONDUCTOR LASER
Document Type and Number:
Japanese Patent JPS58114480
Kind Code:
A
Abstract:
The invention is a semiconductor laser which includes a substrate with a pair of substantially parallel grooves in a surface thereof with a mesa therebetween where the height of the surface of the mesa above the bottom of the grooves is different than the height of the major surface of the substrate above the bottom of the grooves. Layers deposited on this substrate exhibit an increased taper in thickness in the lateral direction.
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Inventors:
DAN BOTETSU
Application Number:
JP14540082A
Publication Date:
July 07, 1983
Filing Date:
August 20, 1982
Export Citation:
Assignee:
RCA CORP
International Classes:
H01L21/208; H01S5/00; H01S5/042; H01S5/223; (IPC1-7): H01L21/208; H01S3/18
Attorney, Agent or Firm:
Satoshi Shimizu