Title:
SIMULATION CIRCUIT FOR DIODE
Document Type and Number:
Japanese Patent JP3333853
Kind Code:
B2
Abstract:
PURPOSE: To improve the characteristics of a simulation circuit for diode being employed in analog simulator.
CONSTITUTION: The simulation circuit 20 comprises an N-MOSFET 21 incorporating a diode, an amplifier 22, a comparator 23, and an inverter element 24. If the drain-source voltage is negative with reference to the source voltage of the N-MOSFET 21, a positive bias is applied to the gate of the N-MOSFET 21 through the inverter element 24 thus conducting the N-MOSFET 21. If the drain-source voltage is positive, the N-MOSFET 21 is brought into unconductive state.
Inventors:
Koshi Nakazawa
Application Number:
JP5843095A
Publication Date:
October 15, 2002
Filing Date:
March 17, 1995
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
International Classes:
G01R31/00; G06G7/12; (IPC1-7): G06G7/12
Domestic Patent References:
| JP6190509A | ||||
| JP6089279A |
Attorney, Agent or Firm:
Masaharu Shinobe