Title:
SURFACE ACOUSTIC WAVE DEVICE
Document Type and Number:
Japanese Patent JPS58114519
Kind Code:
A
Abstract:
PURPOSE: To attain a surface acoustic wave device excellent in temperature stability at broad band, by propagating surface acoustic waves toward the specific direction of potassium and lithium niobate single crystal.
CONSTITUTION: A potassium and lithium niobate single crystal having a tungsten bronz type crystal construction is used as a substrate 21. After the Z axis of the substrate 21 is polarized, the substrate an angle μ from the Z axis of which is within 30∼70° is cut out in a plane where the direction vertical to the major plane is within the Z and -Y axes. A reed screen electrode is formed for this substrate and surface acoustic waves are propagated vertically to the X axis.
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Inventors:
TAKEUCHI HIROYUKI
YAMASHITA KUNIO
NAGATSUMA KAZUYUKI
ITOU YUKIO
YAMASHITA KUNIO
NAGATSUMA KAZUYUKI
ITOU YUKIO
Application Number:
JP22687982A
Publication Date:
July 07, 1983
Filing Date:
December 27, 1982
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H03H9/25; H03H3/08; H03H9/02; (IPC1-7): H03H9/25
Attorney, Agent or Firm:
Toshiyuki Usuda