PURPOSE: To provide a surface light emitting element such as a low-resistance vertical resonator surface light emitting laser or the like using a nondoped semiconductor multilayer film reflector, concerning a surface light emitting element and its manufacture.

CONSTITUTION: Semiconductor layers 21 and 22 large in band gap such as GaAs, AlAs, or the likes are grown alternately on a first conductivity/type semiconductor substrate 1 such as GaAs, or the like so as to form the first conductivity type semiconductor multilayer film reflector 2, and thereon a clad layer, a single layer distorted quatum well, a clad layer, etc., are grown to form a resonator 3, and thereon semiconductor layers 51 and 52 large in band gap such as GaAs, AlAs, or the likes are grown alternately to form a nondoped semiconductor multilayer film reflector 5. A high-impurity-concentration area 7 is formed in the section excluding the area right above the luminous region of this nondoped semiconductor multilayer film reflector 5 by introducing second conductivity type impurities, and a current injection part 81 is formed in this high-impuritty-concentration area 7.