Title:
THIN-FILM TRANSISTOR
Document Type and Number:
Japanese Patent JPH04302474
Kind Code:
A
Abstract:
PURPOSE: To prevent short circuits between the gate electrode and source/drain electrodes by depositing a sufficiently thick gate insulator over the whole region for transistor formation to increase the dielectric strength of the gate insulator.
CONSTITUTION: A metal film 12 having at least the same area of a transistor region is used in part for a lower electrode or gate electrode 12a. The rest of the metal film 12 is anodized to the total depth to convert it to an insulating oxide film 12b. This prevents steps around the gate electrode 12a.
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Inventors:
MATSUDA KUNIHIRO
ISHII HIROMITSU
ISHII HIROMITSU
Application Number:
JP8899491A
Publication Date:
October 26, 1992
Filing Date:
March 29, 1991
Export Citation:
Assignee:
CASIO COMPUTER CO LTD
International Classes:
H01L21/316; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/316; H01L29/784