Title:
LIQUID PHASE EPITAXIAL GROWTH APPARATUS
Document Type and Number:
Japanese Patent JPS5929415
Kind Code:
A
Abstract:
PURPOSE:To facilitate both the doping of an impurity into a melt from a vapor phase and the evaporation of the impurity from the melt, by a method wherein small bores of a specific size are dispersedly provided in a partition plate brought into contact with the surface of a solution for a liquid phase epitaxial growth. CONSTITUTION:A partition plate 3 is disposed on a melt 2 so that the melt 2, which is brought into contact with a substrate 1, is uniform in thickness. The partition plate 3 is dispersedly provided with a multiplicity of small bores 7 with a diameter of 0.1-0.9mm. through which gas passes. Thus, an atmosphere gas and the melt 2 are allowed to contact each other through the small bores 7, so that the doping and evaporation of an impurity are uniformly effected over the whole area of the melt 2, thereby making it possible to improve the uniformity of the impurity concentration in an epitaxial layer.
Inventors:
KAWABATA TOSHIHARU
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
FURUIKE SUSUMU
MATSUDA TOSHIO
IWASA HITOO
Application Number:
JP13941782A
Publication Date:
February 16, 1984
Filing Date:
August 10, 1982
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B19/00; H01L21/208; (IPC1-7): H01L21/208
Attorney, Agent or Firm:
Akira Kobiji (2 outside)