To obtain a high strength connection without impairing large damage to a substrate under the conditions of low load and small amplitude by disposing a third metal of a melting point of a specific temperature or lower between both connecting members, and ultrasonic connecting Al or Al alloy to other metal with a low connecting load in a wide surface.
A Cu lead 4 having an Sn film 5 having a low melting point (300°C or lower) and formed at a connecting surface side by partial plating on an Si device 3 formed with an Al-Si connecting film 1 is disposed on an Si substrate 2. A load is applied to the lead 4 by a W bonding tool 6 from above, heat from a heater 8 is transferred to the lead 4 via the tool to heat it, and an ultrasonic vibration 7 is also applied to the lead 4. In the connecting step, simultaneously upon collapsing of an Al oxide film, the surface is covered with liquid metal, and hence Al clean surface is easily protected even in the case of a low load. Thus, the Al or Al alloy can be metallurgically connected to other metal in a wide surface. Therefore, it can be connected without developing an excess stress at a member.
KOIZUMI MASAHIRO
TAKAHASHI KAZUYA
MORITA TOSHIAKI
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