Title:
VAPOR PHASE GROWTH SYSTEM
Document Type and Number:
Japanese Patent JP3495501
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the quantity of reaction products deposited on the surface of a device component within a reaction chamber.
SOLUTION: This device has a reaction chamber, as a wafer processing device, formed by covering a base plate 2 with a belljar 3. In this case, the base plate surface around an exhaust hole 19 provided in the base plate 2 so as to exhaust a reaction gas from a processing chamber is covered with a plate 21 made of quartz glass. Also, a small protrusion 22 is arranged on the back side of the quartz glass plate 21 to provide a slight gap between the back side of the plate 21 and the surface of the base plate 2 so that the back side of the plate 21 does not directly contact the surface of the base plate 2.
Inventors:
Yoshihiro Miyanomae
Nobuo Kashiwagi
Nobuo Kashiwagi
Application Number:
JP9257496A
Publication Date:
February 09, 2004
Filing Date:
April 15, 1996
Export Citation:
Assignee:
Toshiba Machine Co., Ltd.
International Classes:
C30B25/08; C23C16/08; C23C16/44; C23C16/455; H01L21/205; (IPC1-7): H01L21/205; C23C16/08; C23C16/455
Domestic Patent References:
| JP410528A | ||||
| JP62252931A | ||||
| JP7273037A | ||||
| JP61157326U |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)
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