Title:
WAFER PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP3495502
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a structure for performing gas substitution within a block section arranged inside of a processing chamber of a wafer processing device, like an RF coil cover in a vapor phase growth system.
SOLUTION: A vapor phase growth system includes a processing chamber 1 formed by covering a base plate 2 with a belljar 3, a main exhaust tube 16 connected to the base plate 2 for exhausting a reaction gas from the processing chamber 1, a block section 11 arranged inside the processing chamber 1 and formed by covering the base plate 2 with a cover member, a feed tube 18 for supplying a purge gas into the block section 11, and a sub-exhaust tube 17 connected to the base plate 2 for exhausting the purge gas from the block section 11. The sub-exhaust tube 17 is connected to a halfway portion of the main exhaust tube 16 so that the gases are exhausted simultaneously from the processing chamber 1 and the block section 11. In this case, pressure regulating valves 14, 15 are provided at an inlet portion of the sub-exhaust tube 17, thereby operating in accordance with fluctuation in pressure of the main exhaust tube 16.
Inventors:
Yoshihiro Miyanomae
Nobuo Kashiwagi
Nobuo Kashiwagi
Application Number:
JP9257596A
Publication Date:
February 09, 2004
Filing Date:
April 15, 1996
Export Citation:
Assignee:
Toshiba Machine Co., Ltd.
International Classes:
C23C16/08; C23C16/44; C23C16/455; H01L21/205; (IPC1-7): H01L21/205; C23C16/08; C23C16/455
Domestic Patent References:
| JP6112147A | ||||
| JP5182917A | ||||
| JP61258413A | ||||
| JP3278427A | ||||
| JP6445767U |
Attorney, Agent or Firm:
Takehiko Suzue (6 outside)