Title:
VARIABLE CAPACITANCE ELEMENT AND CRYSTAL OSCILLATOR CIRCUIT USING THE SAME
Document Type and Number:
Japanese Patent JPH11238849
Kind Code:
A
Abstract:
To form as another circuit element on the same semiconductor substrate, while attaining a desired large capacitance change.
This element is constituted of an oxide film 3 provided so as to cover on a surface of a P-type or N-type semiconductor substrate 1, a first conductor 4 provided in a part of a surface of the oxide film 3, a diffused region 2 in which impurity concentration of an N-type or P-type provided counter to the first conductor 4 via the oxide film 3 is higher than the semiconductor substrate 1, and a second conductor 5 for applying a voltage on the diffused region 2, and the semiconductor substrate 1 is constituted so that a voltage is applied via the second conductor 5.
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Inventors:
MUTO MASAKI
Application Number:
JP3698898A
Publication Date:
August 31, 1999
Filing Date:
February 19, 1998
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
H01L27/04; H01L21/822; H01L41/09; H03B5/12; H03B5/32; (IPC1-7): H01L27/04; H01L21/822; H01L41/09; H03B5/12; H03B5/32
Attorney, Agent or Firm:
Tomoyuki Takimoto (1 person outside)