Title:
A manufacturing method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6156814
Kind Code:
B2
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Inventors:
Kenji Fukuda
Noriyuki Iwamuro
Masahide Goto
Noriyuki Iwamuro
Masahide Goto
Application Number:
JP2012104224A
Publication Date:
July 05, 2017
Filing Date:
April 27, 2012
Export Citation:
Assignee:
Fuji Electric Co., Ltd.
National Institute of Advanced Industrial Science and Technology
National Institute of Advanced Industrial Science and Technology
International Classes:
H01L21/28
Domestic Patent References:
| JP2005012099A | ||||
| JP2011233612A | ||||
| JP2009272530A | ||||
| JP9283738A |
Foreign References:
| WO2011027523A1 | ||||
| WO2009054140A1 |
Attorney, Agent or Firm:
Akinori Sakai
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