Title:
A manufacturing method of a silicon carbide semiconductor device
Document Type and Number:
Japanese Patent JP6237489
Kind Code:
B2
Abstract:
A silicon carbide substrate having a first main surface and a second main surface opposite to the first main surface is prepared. A surface electrode is formed in contact with the first main surface of the silicon carbide substrate. An adhesive tape is adhered to the surface electrode so as to cover the surface electrode. The silicon carbide substrate is heated at a first pressure lower than atmospheric pressure, with the adhesive tape being adhered to the surface electrode. After the silicon carbide substrate is heated, the second main surface of the silicon carbide substrate is ground. After the second main surface is ground, the second main surface of the silicon carbide substrate is processed at a second pressure lower than atmospheric pressure, with the adhesive tape being adhered to the surface electrode.
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Inventors:
Hiroyuki Kitabayashi
Application Number:
JP2014128202A
Publication Date:
November 29, 2017
Filing Date:
June 23, 2014
Export Citation:
Assignee:
Sumitomo Electric Industries, Ltd.
International Classes:
H01L21/336; H01L21/28; H01L21/683; H01L29/12; H01L29/739; H01L29/78
Domestic Patent References:
| JP2014011224A | ||||
| JP2013026247A | ||||
| JP2007109758A | ||||
| JP2006013000A |
Foreign References:
| US20140004696 | ||||
| US20130017671 |
Attorney, Agent or Firm:
Fukami patent office