Title:
A method for film deposition and a film deposition system
Document Type and Number:
Japanese Patent JP6020239
Kind Code:
B2
Abstract:
A method for depositing a film is provided. In the method, an object to be processed is accommodated in a process chamber, and an insulating film made of a polymer thin film is deposited on a surface of the object to be processed by supplying a first source gas composed of an acid anhydride and a second source gas composed of a diamine into the process chamber that is evacuated. Next, the insulating film is modified so as to have a barrier function by stopping the supply of the second source gas into the process chamber and continuously supplying the first source gas into the process chamber.
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Inventors:
Yoshihei Sugita
Hiroyuki Hashimoto
Muneo Harada
Hiroyuki Hashimoto
Muneo Harada
Application Number:
JP2013027972A
Publication Date:
November 02, 2016
Filing Date:
February 15, 2013
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/312; H01L21/3205; H01L21/768; H01L23/522; H01L23/532
Domestic Patent References:
| JP3013561A | ||||
| JP61261322A | ||||
| JP2000021866A | ||||
| JP2002275619A | ||||
| JP2012015195A | ||||
| JP2001085419A |
Foreign References:
| WO2012001848A1 |
Attorney, Agent or Firm:
Akihiro Asai