Title:
HEAT-RESISTANT INSULATION LAYER, FORMING METHOD FOR SAME, AND SEMICONDUCTOR DEVICE PRODUCED THEREBY
Document Type and Number:
Japanese Patent JP3953679
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To form a heat-resistant insulation layer excellent in adhesion to the surface of a semiconductor element by forming a polyamide layer and a polyimide layer on the surface.
SOLUTION: A polyamide of formula I is applied to the surface of a semiconductor element and dried by prebaking at 100-200°C to form a polyamide layer. A polyamide of formula II is applied to the polyamide layer formed as above and thermally cured to form a polyimide layer, thus forming a heat-resistant insulation layer. A positive photosensitive resist is applied to the heat-resistant insulation layer, then prebaked, and exposed to a chemical ray in the shape of a desired pattern by using a mask. The exposed part is developed, and the resultant relief pattern is rinsed. In the formulas, X is a group of formula III or IV; Y is a group of formula V or VI; Z is a group of formula VII; R1 and R2 are each a divalent organic group; R3 and R4 are each a monovalent organic group; XX is a tetravalent aromatic group: a and b are each a molar fraction provided a+b is 100 mol%, a is 60.0-100.0 mol%, and b is 0-40.0 mol%; and n is 2-500.
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Inventors:
Yamamoto Keiji
Takashi Hirano
Takashi Hirano
Application Number:
JP9053899A
Publication Date:
August 08, 2007
Filing Date:
March 31, 1999
Export Citation:
Assignee:
Sumitomo Bakelite Co., Ltd.
International Classes:
C09D179/08; H01L21/768; C08G73/08; C08G73/10; H01B3/30; H01B17/60; H01L21/312; H01L23/522; (IPC1-7): C09D179/08; C08G73/08; C08G73/10; H01B3/30; H01B17/60; H01L21/312; H01L21/768
Domestic Patent References:
| JP10270611A | ||||
| JP10010740A | ||||
| JP9302221A |
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