Title:
半導体基板
Document Type and Number:
Japanese Patent JP7329584
Kind Code:
B2
Abstract:
Provided are a semiconductor substrate and a transistor. The semiconductor substrate includes a base, an insulating layer, a semiconductor layer, a wide bandgap diffusion buffer layer and a nucleation layer. The insulating layer is disposed on the base. The semiconductor layer is disposed on the insulating layer. The wide bandgap diffusion buffer layer is disposed on the semiconductor layer, wherein the bandgap of the wide bandgap buffer diffusion layer is higher than 2.5 eV. The nucleation layer is disposed on the wide bandgap diffusion buffer layer, wherein the nucleation layer includes an aluminum-containing layer.
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Inventors:
Liu Xuexing
Application Number:
JP2021204503A
Publication Date:
August 18, 2023
Filing Date:
December 16, 2021
Export Citation:
Assignee:
INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE
International Classes:
H01L21/20; H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2015043414A | ||||
| JP2007503726A | ||||
| JP2013058626A | ||||
| JP2009527913A |
Attorney, Agent or Firm:
Kenji Sugimura
Mitsutsugu Sugimura
Toshio Fukui
Mitsutsugu Sugimura
Toshio Fukui