Title:
A zero dimension electronic devide and a manufacturing method for the same
Document Type and Number:
Japanese Patent JP6208169
Kind Code:
B2
Abstract:
A semiconductor device comprises a substrate and quantum dots, wherein a peak emission of the quantum dots has a FWHM of less than 20 meV when the semiconductor is measured at a temperature of 4 Kelvin.
More Like This:
Inventors:
Zhang Utatsu
Application Number:
JP2015103847A
Publication Date:
October 04, 2017
Filing Date:
May 21, 2015
Export Citation:
Assignee:
Zhang Utatsu
International Classes:
H01L33/06; B82Y20/00; B82Y40/00; H01L21/20; H01L29/06; H01L29/15; H01L31/0352; H01L33/12; H01L33/30; H01S5/34; H01S5/343
Domestic Patent References:
| JP2007311463A | ||||
| JP2001053014A | ||||
| JP8236447A | ||||
| JP2009016710A |
Other References:
Masafumi Jo et al,Two-Step Formation of Gallium Droplets with High Controllability og Size and Density ,CRYSTAL GROWTH & DESIGN,2011年,11,p.4647-4651
K. D. Glinchuk et al,An Analysis of the Shape of a Luminescence Band Induced by Transisions of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals,Semiconductors,2001年,Vol.35, No.4,p.396-402
K. D. Glinchuk et al,An Analysis of the Shape of a Luminescence Band Induced by Transisions of Free Electrons to Carbon Atoms in Semi-Insulating Undoped GaAs Crystals,Semiconductors,2001年,Vol.35, No.4,p.396-402
Attorney, Agent or Firm:
Makoto Onda
Hironobu Onda
Atsushi Honda
Hironobu Onda
Atsushi Honda