Title:
COMPOUND SEMICONDUCTOR MANUFACTURING DEVICE, COMPOUND SEMICONDUCTOR MANUFACTURING METHOD, AND JIG FOR MANUFACTURING COMPOUND SEMICONDUCTOR
Document Type and Number:
WIPO Patent Application WO/2010/053094
Kind Code:
A1
Abstract:
When a compound semiconductor layer is formed on a compound semiconductor substrate (40) by sequentially layering group-III nitride semiconductor crystalline layers on the compound semiconductor substrate (40) by means of an organometallic vapor deposition method, the compound semiconductor substrate (40) is installed within a reaction chamber with the crystal growth face thereof facing up, a protection member (60), whereon multiple grooves (63) are formed in a radiating manner on the side facing the crystal growth face, is installed above the compound semiconductor substrate (40), and a starting material gas is supplied to the interior of the reaction chamber through a first through-hole (61) provided in the center of the protection member (60). Thus, in the manufacture of a compound semiconductor using an organometallic vapor deposition method, a decrease in yield caused by reaction byproducts which have peeled off and which adhere to the substrate or to the epitaxial film on the substrate is suppressed.
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Inventors:
SAKURAI TETSUO (JP)
Application Number:
PCT/JP2009/068834
Publication Date:
May 14, 2010
Filing Date:
November 04, 2009
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
SAKURAI TETSUO (JP)
SAKURAI TETSUO (JP)
International Classes:
H01L21/205; C23C16/44
Foreign References:
| JP2000228398A | 2000-08-15 | |||
| JP2003518199A | 2003-06-03 | |||
| JP2002234793A | 2002-08-23 | |||
| JP2008247639A | 2008-10-16 | |||
| JPH10163180A | 1998-06-19 |
Attorney, Agent or Firm:
FURUBE, Jiro et al. (JP)
Jiro Furube (JP)
Jiro Furube (JP)
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