Title:
METHOD FOR PRODUCING SiC SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2014/208400
Kind Code:
A1
Abstract:
This method for producing an SiC substrate comprises at least a CMP step wherein an Si surface (1a) and a C surface (1b) of an SiC substrate (1) are subjected to double side polishing by a Chemical Mechanical Polishing (CMP) method at a C surface/Si surface processing selectivity of 3.0 or more.
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Inventors:
SASAKI YUZO (JP)
Application Number:
PCT/JP2014/065996
Publication Date:
December 31, 2014
Filing Date:
June 17, 2014
Export Citation:
Assignee:
SHOWA DENKO KK (JP)
International Classes:
H01L21/304; B24B37/00; B24B37/005; B24B37/08; C09G1/02; C09K3/14
Foreign References:
| JP2008179655A | 2008-08-07 | |||
| JP2009238891A | 2009-10-15 | |||
| JP2008166329A | 2008-07-17 | |||
| JP2011513991A | 2011-04-28 | |||
| JP2010284784A | 2010-12-24 |
Attorney, Agent or Firm:
SHIGA Masatake et al. (JP)
Masatake Shiga (JP)
Masatake Shiga (JP)
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